Infineon Technologies CoolSiC™ 1700V SiC Trench MOSFETs
Infineon CoolSiC™ 1700V SiC Trench MOSFETs feature a revolutionary Silicon Carbide material optimized for fly-back topologies. The SiC Trench MOSFETs offer a 12V/0V gate-source voltage compatible with most fly-back controllers.
In addition, the CoolSiC 1700V SiC Trench MOSFETs can be directly driven from a fly-back controller and provide efficiency improvements with cooling effort reduction.
The Infineon CoolSiC 1700V SiC Trench MOSFETs are ideal for energy generation, industrial power supplies, and charge infrastructure applications.
Features
- Revolutionary semiconductor material - Silicon Carbide
- Optimized for fly-back topologies
- 12V/0V gate-source voltage compatible with most fly-back controllers
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Fully controllable dV/dt for EMI optimization
- Reduction of system complexity
- Directly drive from the fly-back controller
- Efficiency improvement and cooling effort reduction
- Enabling higher frequency
Applications
- Energy generation, solar string inverter and solar optimizer
- Infrastructure – charger
- Industrial power supplies, UPS, SMPS
Typical Application
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Published: 2020-04-15
| Updated: 2024-10-15