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Infineon Technologies 700V CoolGaN™ G5 Power Transistors

Infineon Technologies 700V CoolGaN™ G5 Power Transistors represent a significant advancement in power conversion technology. These gallium nitride (GaN) transistors are designed to operate at high frequencies with superior efficiency, enabling ultra-fast switching and minimizing energy losses. The 700V CoolGaN G5 series features enhancement-mode transistors that are normally off, ensuring safe operation and high reliability. With low gate and output charge, these transistors support high power density designs and reduce system BOM costs.

Robust commutation ruggedness and high ESD standards make these transistors ideal for consumer applications such as chargers, adapters, and home appliances. The bottom-side cooled ThinPAK package further enhances thermal management, allowing for compact and efficient designs. Overall, Infineon 700V CoolGaN™ G5 Power Transistors offer a compelling combination of performance, reliability, and cost-effectiveness for modern power conversion needs.

Features

  • Enhancement mode transistor
  • Ultra‑fast switching
  • No reverse‑recovery charge
  • Capable of reverse conduction
  • Low gate and output charge
  • Superior commutation ruggedness
  • 2kV HBM ESD standards
  • Normally OFF transistor technology ensures safe operation
  • Enables rapid and precise power delivery control
  • Improves system efficiency and reliability
  • Ensures robust performance under challenging conditions
  • PG‑TSON‑8 package
  • Moisture Sensitivity Level (MSL) 3
  • Lead-free, Halogen-free, and RoHS compliant

Applications

  • AC-DC auxiliary power supplies
  • AC-DC power conversion for telecom infrastructures
  • Consumer electronics
  • Home appliances
  • Power conversion
  • USB-C adapters and chargers
  • Data center and AI data center solutions
  • Industrial power supplies

Specifications

  • Drain-source voltage
    • 700V maximum continuous
    • 900V maximum transient
    • 650V or 750V maximum pulsed
  • 2.6mA to 4.8mA maximum leakage current range at the drain-source transient voltage
  • 750V maximum pulsed switching surge voltage
  • 7.2A to 13A maximum drain-source continuous current range
  • 7.7A to 23A maximum drain-source pulsed current range
  • 4.2mA to 7.7mA maximum continuous gate current
  • Gate-source voltage
    • -10V minimum continuous
    • -25V minimum pulsed
  • 28W to 47W maximum power dissipation
  • 170mΩ to 330mΩ on-drain-source resistance range
  • 200V/ns maximum drain-source voltage slew rate
  • -40°C to +150°C operating junction temperature range

Schematic

Schematic - Infineon Technologies 700V CoolGaN™ G5 Power Transistors

Resource

Published: 2025-04-18 | Updated: 2025-05-02