Infineon Technologies 700V CoolGaN™ G4 Power Transistors
Infineon Technologies 700V CoolGaN™ G4 Power Transistors are enhancement-mode GaN-on-Si power transistors with properties that allow for high-current, high-voltage breakdown, and high-switching frequency. The GaN systems innovate with industry-leading advancements like patented Island Technology® cell layout which realizes high-current die and high yield. These 700V CoolGaN power transistors enable ultra-power density designs and high system efficiency in power switching. The GS-065 power transistors are housed in the bottom-side cooled PDFN package. These power transistors offer very low junction-to-case thermal resistance, making them ideal for demanding high-power applications. Some of the applications include data center and computing solutions, power adapters, LED lighting drivers, Switched Mode Power Supplies (SMPS), wireless power transfer, and motor drives.Features
- 700V e-mode power transistor
- 850V transient drain-to-source voltage
- Bottom-cooled, 8x8 mm PDFN package
- RDS(on) ranging from 40mΩ to 315mΩ
- Ultralow FOM
- Gate drive requirements (0V to 6V)
- High switching frequency (>1MHz)
- Fast, controllable fall, and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Supports high operating frequency
- Enables highest system efficiency
- Enables ultra-power density designs
- Supports BOM cost savings
Applications
- Power adapters
- LED lighting drivers
- Fast battery charging
- Power factor correction
- Industrial power supplies
- Photovoltaic
- AC-DC power conversion for telecom infrastructure
- Datacenter and computing solutions
- Appliance and industrial motor drives
- Wireless power transfer
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Published: 2024-05-07
| Updated: 2025-04-18
