Infineon Technologies 700V CoolGaN™ G4 Power Transistors

Infineon Technologies 700V CoolGaN™ G4 Power Transistors are enhancement-mode GaN-on-Si power transistors with properties that allow for high-current, high-voltage breakdown, and high-switching frequency. The GaN systems innovate with industry-leading advancements like patented Island Technology® cell layout which realizes high-current die and high yield. These 700V CoolGaN power transistors enable ultra-power density designs and high system efficiency in power switching. The GS-065 power transistors are housed in the bottom-side cooled PDFN package. These power transistors offer very low junction-to-case thermal resistance, making them ideal for demanding high-power applications. Some of the applications include data center and computing solutions, power adapters, LED lighting drivers, Switched Mode Power Supplies (SMPS), wireless power transfer, and motor drives.

Features

  • 700V e-mode power transistor
  • 850V transient drain-to-source voltage
  • Bottom-cooled, 8x8 mm PDFN package
  • RDS(on) ranging from 40mΩ to 315mΩ
  • Ultralow FOM
  • Gate drive requirements (0V to 6V)
  • High switching frequency (>1MHz)
  • Fast, controllable fall, and rise times
  • Reverse conduction capability
  • Zero reverse recovery loss
  • Supports high operating frequency
  • Enables highest system efficiency
  • Enables ultra-power density designs
  • Supports BOM cost savings

Applications

  • Power adapters
  • LED lighting drivers
  • Fast battery charging
  • Power factor correction
  • Industrial power supplies
  • Photovoltaic
  • AC-DC power conversion for telecom infrastructure
  • Datacenter and computing solutions
  • Appliance and industrial motor drives
  • Wireless power transfer

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Published: 2024-05-07 | Updated: 2025-04-18