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Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors

Infineon Technologies CoolGaN™ Gen 2 650V Power Transistors feature highly efficient GaN (gallium nitride) transistor technology for power conversion in a voltage range up to 650V. Infineon’s GaN technology brings the e‑mode concept to maturity with high volumes of end-to-end production. This pioneering quality ensures the highest standards and offers the most reliable performance. The enhancement mode CoolGaN™ Gen 2 650V power transistors improve system efficiency and power density with ultra-fast switching.

Features

  • Enhancement mode transistor, normally OFF switch
  • Ultra-fast switching
  • No reverse recovery charge
  • Capable of reverse conduction
  • Low gate charge, low output charge
  • Superior commutation ruggedness
  • Improves system efficiency
  • Improves power density
  • Enables high operating frequency
  • System cost reduction savings
  • Reduces EMI
  • Package options
    • PG‑DSO‑20
    • PG‑HDSOP‑16
    • PG‑TSON‑8
  • ESD (HBM/CDM) JEDEC standards
  • Lead free, halogen free, and RoHS compliant

Applications

  • Industrial
  • Chargers and adapters based on half‑bridge topologies (half‑bridge topologies for hard and soft switching such as Totem pole PFC, high-frequency LLC)
  • Telecom
  • Datacenter SMPS

Specifications

  • 1.6V gate-source threshold voltage
  • -10V gate-source voltage
  • 650V drain-source breakdown voltage
  • 1.4nC to 16nC gate charge range
  • 30mΩ to 330mΩ RDS on-drain-source resistance range
  • 7.2A to 67A continuous drain current range
  • 28W to 219W power dissipation range
  • -55°C to +150°C operating temperature range

Videos

Published: 2024-11-05 | Updated: 2025-09-30