SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules
SemiQ GCMX 1200V SiC MOSFET Full-Bridge Modules offer low switching losses, low junction-to-case thermal resistance, and very rugged and easy mounting. These modules directly mount the heatsink (isolated package) and include a Kelvin reference for stable operation. All parts have been rigorously tested to withstand voltages above 1350V. The hallmark characteristic of these modules is the robust 1200V drain-source voltage. The GCMX full-bridge modules operate at a 175°C junction temperature and are RoHS-compliant. Typical applications include photovoltaic inverters, battery chargers, energy storage systems, and high-voltage DC-to-DC converters.Features
- High-speed switching SiC MOSFETs
- Reliable body diode
- All parts tested to above 1350V
- Direct mounting to the heatsink (isolated package)
- 175°C junction temperature
- Kelvin reference for stable operation
- Low switching losses
- Low junction to case thermal resistance
- Very rugged and easy mounting
- RoHS-compliant
Applications
- Photovoltaic inverter
- Battery charger
- Energy storage system
- High voltage DC-to-DC converter
View Results ( 9 ) Page
| Part Number | Datasheet | Transistor Polarity | Fall Time | Id - Continuous Drain Current | Pd - Power Dissipation | Rds On - Drain-Source Resistance | Rise Time | Typical Turn-Off Delay Time | Typical Turn-On Delay Time | Vds - Drain-Source Breakdown Voltage | Vgs th - Gate-Source Threshold Voltage |
|---|---|---|---|---|---|---|---|---|---|---|---|
| GCMX040A120B3H1P | ![]() |
N-Channel | 12 ns | 53 A | 208 W | 38 mOhms | 6 ns | 25 ns | 16 ns | 1.2 kV | 1.8 V |
| GCMX080A120B2H1P | ![]() |
N-Channel | 4 ns | 27 A | 119 W | 77 mOhms | 3 ns | 18 ns | 10 ns | 1.2 kV | 1.8 V |
| GCMX010A120B3H1P | ![]() |
N-Channel | 15 ns | 201 A | 600 W | 8.9 mOhms | 9 ns | 50 ns | 32 ns | 1.2 kV | 4 V |
| GCMX020A120B2H1P | ![]() |
N-Channel | 16 ns | 102 A | 333 W | 18 mOhms | 6 ns | 44 ns | 23 ns | 1.2 kV | 1.8 V |
| GCMX020A120B2H2P | ![]() |
N-Channel | 16 ns | 102 A | 333 W | 28 mOhms | 8 ns | 48 ns | 25 ns | 1.2 kV | 4 V |
| GCMX020A120B3H1P | ![]() |
N-Channel | 18 ns | 93 A | 300 W | 18.1 mOhms | 10 ns | 46 ns | 26 ns | 1.2 kV | 1.8 V |
| GCMX040A120B2H1P | ![]() |
N-Channel | 13 ns | 56 A | 217 W | 38 mOhms | 5 ns | 26 ns | 16 ns | 1.2 kV | 1.8 V |
| GCMX040A120B2H2P | ![]() |
N-Channel | 11 ns | 56 A | 217 W | 52 mOhms | 7 ns | 29 ns | 16 ns | 1.2 kV | 4 V |
| GCMX080A120B2H2P | ![]() |
N-Channel | 12 ns | 27 A | 119 W | 100 mOhms | 5 ns | 22 ns | 11 ns | 1.2 kV | 4 V |
Published: 2024-03-01
| Updated: 2025-05-27

