Vishay / Siliconix SiA429DJT 20V P-Channel MOSFETs
Vishay / Siliconix SiA429DJT 20V P-Ch TrenchFET® Power MOSFETs offer a low on-resistance for a P-Channel device with a sub-0.8mm profile. Vishay / Siliconix SiA429DJT TrenchFET Power MOSFETs come in a thermally enhanced Thin PowerPAK® SC-70 package with an ultra-low 0.6mm profile. The SiA429DJT is ideal for DC/DC converters and load and charger switches. The lower on-resistance translates into lower conduction losses.
Features
- TrenchFET® Power MOSFET
- Thermally Enhanced PowerPAK® SC-70 Package
- Small Footprint Area
- Ultra-Thin 0.6mm height
- 20V drain-source voltage
- On-resistance:
- 20.5mΩ at 4.5V
- 27mΩ at 2.5V
- 36mΩ at 1.8V
- 60mΩ at 1.5V
Applications
- Load Switch and Charger Switch for Portable Devices
- DC/DC Converter
Associated Products
Vishay Semiconductors TrenchFET® Gen III Power MOSFETs
Offers low on-resistance and on-resistance times gate charge.
Vishay / Siliconix TrenchFET® MOSFETs
Industry-best on-resistance in a variety of package configurations.
Vishay / Siliconix TrenchFET® Gen IV MOSFETs
Offers an industry-low on-resistance down to 1.35mΩ at 4.5V.
Published: 2011-08-02
| Updated: 2022-03-11