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STMicroelectronics STM 650V M Series Trench Gate Field-Stop IGBTs

STMicroelectronics 650V M Series Trench Gate Field-Stop IGBTs are developed using an advanced proprietary trench gate field-stop structure. STMicroelectronics 650V M series supply a 3A-150A maximum collector current for applications with up to 100kHz operating frequency. The IGBTs have an optimized design and are available in a tailored built-in anti-parallel diode. A positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.

Features

  • 6μs of short-circuit withstand time
  • VCE(sat) = 1.55 V (typ.) @ IC = 10A, 
  • 30A (STGP30M65DF2, STGB30M65DF2, STGWA30M65DF2)
  • Tight parameters distribution
  • Safer paralleling
  • Low thermal resistance
  • Soft and very fast recovery anti-parallel diode

Applications

  • Motor control
  • UPS
  • PFC

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Published: 2015-07-02 | Updated: 2026-01-12