STMicroelectronics SCTW70N120G2V 1200V 91A SiC Power MOSFETs
STMicroelectronics SCTW70N120G2V 1200V 91A SiC (Silicon Carbide) Power MOSFET features minimal ON-resistance and excellent switching performance, almost independent of temperature, due to the advanced, innovative properties of wide bandgap materials. The SCTW70N120G2V also offers a high-speed, robust intrinsic body diode and extremely low gate charge and input capacities. A high-temperature rating of +200°C enables the improved thermal design of power electronics systems.
The STMicroelectronics SCTW70N120G2V SiC Power MOSFET is offered in a 3-lead HiP247 package.
Features
- Very high operating junction temperature capability (TJ = +200°C)
- Very low switching losses
- Low power losses at high temperatures
- High-speed, robust intrinsic body diode
- Easy to drive
- Small form factor for high power density
- High system efficiency
- Reduced cooling requirements and heatsink size
- 3-lead HiP247 package
Applications
- Traction inverters
- EV charge stations
- Photovoltaics
- Factory automation
- Motor drives
- Datacenter power supplies
- OBC and DC-DC converters
Package Outline
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Published: 2020-09-14
| Updated: 2024-12-31