Texas Instruments Gallium Nitride (GaN)
Texas Instruments Gallium Nitride (GaN) solutions deliver high efficiency, power density, and reliability. The Texas Instruments GaN portfolio consists of controllers, drivers, and regulators that offer reduced power with end-to-end power conversion and 5MHz switching frequencies.The power GaN enables the High-Electron Mobility Transistor (HEMT). The HEMT is a Field-Effect Transistor (FET) allowing lower on-resistance with faster switching than an equivalently-sized silicon power transistor. This benefit makes power conversion more energy and space-efficient. GaN modules grown on silicon substrates enable the use of silicon manufacturing capability. These advantages make the power HEMT widely used in wireless base stations with proven reliability.
Increased power density, maximized dV/dt immunity, and optimized drive strength reduces noise and enhances efficiency. High voltage, high-efficiency PFC and LLC reference designs are available for design solutions, powered by the LMG3410 600V GaN Power Stage. Multiple single-stage 48V power conversion designs can be achieved using the LMG5200 80V GaN Power Stage.
The GaN ecosystem enables new and unique topologies and decreased barriers. Analog and digital GaN FET controllers pair seamlessly with TI GaN power stages and discrete GaN FETs.
Features
- Ease of use, single QFN packaging replaces three CSPs
- Optimized layout minimizes inductance creating the lowest switching loss possible with clean waveforms
- Increased power density
- Maximized dV/dt immunity
- Integrates GaN FET, driver and protection in 1 package
- Drive strength optimized
- Design with our high voltage, high-efficiency PFC and LLC reference designs for telecom and server PSUs powered by LMG3410 600V GaN Power Stage
- Achieve multiple single-stage 48V power conversion designs with the LMG5200 80V GaN Power Stage
- Delivers 3 times lower switching losses
- Enables >5MHz switching frequencies
Videos
Silicon vs. GaN Graph
