Toshiba U-MOSVIII-H Low Voltage High Efficiency MOSFETs

Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are specifically designed for use in the secondary side of AC-DC power supplies for notebook PC adapters, game consoles, servers, desktop PCs, flat-panel displays, and more. They are also designed for use in DC-DC power supplies for communication equipment, servers, and data centers. Toshiba U-MOSVIII-H Low Voltage High-Efficiency MOSFETs are fabricated with Gen 8 trench MOS process, which helps improve power supply efficiency. Other features include low drain-source on-resistance, low leakage current, and high avalanche ruggedness. The series also includes automotive-qualified MOSFETs in a small package.

Features

  • Low drain-source on-resistance
  • Low leakage current
  • Enhancement mode at Vth = 2.0V to 4.0V
  • Fabricated with a Gen-8 trench MOS process designed for various power supply applications
  • Offers high avalanche ruggedness
  • Provides significantly better trade-offs between on-resistance (RON) and input capacitance (CISS), compared to typical Gen 4 trench MOS process
  • Makes it possible to reduce radiation noise, compared to predecessors

Applications

  • Switching voltage regulators
  • Motor drivers
  • DC-DC converters

Videos

Comparison Charts

Chart - Toshiba U-MOSVIII-H Low Voltage High Efficiency MOSFETs
Published: 2013-01-02 | Updated: 2024-10-16