WeEn Semiconductors WNSC Silicon Carbide Schottky Diodes
WeEn Semiconductors WNSC Silicon Carbide (SiC) Schottky Diodes are optimized for use in high-frequency switched-mode power supplies. SiC devices provide many advantages over silicon, including no reverse recovery current, temperature-independent switching, and excellent thermal performance. These features result in higher efficiency, faster operating frequency, higher power density, lower EMI, and reduced system size and cost. WeEn WNSC Silicon Carbide Schottky Diodes are offered in TO-220-2, TO-247-2, and TO-247-3 packages and are lead-free, halogen-free, and RoHS compliant.
Features
- Highly stable switching performance
- High forward surge capability IFSM
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- High junction operating temperature capability (Tj(max) = +175°C)
- TO-220-2, TO-247-2, and TO-247-3 package options
- RoHS compliant
Applications
- Switched-mode power supplies
- Power factor correction
- Telecom and server SMPS
- Uninterruptible power supplies (UPS)
- PV inverters
- PC silver box
- LED/OLED TVs
- Motor crives
Related Diodes
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650V Silicon Carbide Schottky Diodes in a TO-3PF package, ideal for switched-mode power supplies.
WeEn Semiconductors WNSCx 650V Silicon Carbide (SiC) Diodes
Designed for high-frequency switched-mode power supplies, in a compact DFN8x8 package.
WeEn Semiconductors WNSC Silicon Carbide Schottky Diodes
Optimized for use in switched-mode power supplies, in TO-220-2, TO-247-2, and TO-247-3 packages.
Published: 2020-11-19
| Updated: 2025-01-03