Wolfspeed HM3 High Power Modules
Wolfspeed HM3 High Power Modules are all-silicone carbide, switching optimized, low inductance modules in a low profile footprint (110mm x 65mm x 12.2mm). The HM3 components implement switching-optimized third-generation SiC MOSFET technology. A lightweight 62mm compatible ALSiC baseplate enables system retrofitting. Other features include a 175°C junction operation temperature and a high-reliability silicon nitride insulator. The Wolfspeed HM3 High-Performance Half-Bridge Modules are ideal for railway/traction, solar, EV charger, and industrial automation/testing applications.Features
- Lightweight, compact form factor with 62mm compatible lightweight AlSiC baseplate enables system retrofit
- Increased system efficiency due to low switching and conduction losses of SiC
- High-reliability material selection
- Low inductance and low profile
- High junction temperature (175°C) operation
- Implements switching optimized third-generation SiC MOSFET technology
- High-reliability silicon nitride insulator
Specifications
- 1200V or 1700V drain-source voltage
- Gate-source voltage
- -8V to 19V maximum value
- -4V to 15V recommended op value
- -40°C to 175°C maximum virtual junction temperature under switching conditions
- MOSFET
- 1200V or 1700V drain-source breakdown voltage
- 0.47Ω or 0.8Ω internal gate resistance
- Capacitance
- 43.1nF or 79.4nF input
- 2.76nF or 2.9nF output
- 70.7pF to 90pF reverse transfer capacitance
- Charge
- 448nC or 79.4nC gate-to-source
- 539nC or 924nC gate-to-drain
- 1590nC or 2724nC total gate
- Diode
- 28ns or 49ns reverse recovery time
- 4.5µC or 17.0µC reverse recovery charge
- 270A or 540A peak reverse recovery current
- Module
- Package resistance
- 106.5µΩ M1
- 126.3µΩ M2
- 4.8nH to 4.9nH stray inductance
- 125°C case temperature
- 179g to 180g in weight
- 4kV case isolation voltage
- Package resistance
Applications
- Railway and traction
- Solar
- EV Chargers
- Industrial automation and testing
Published: 2020-07-28
| Updated: 2025-06-20
