onsemi FFSP0865B 650V 8A SiC Schottky Diodes

onsemi FFSP0865B 650V, 8A Silicon Carbide Schottky Diodes use a technology that provides superior switching performance and higher reliability. onsemi FFSP0865B SiC Diodes feature temperature-independent switching characteristics, no reverse recovery current, and excellent thermal performance. Additional benefits include the highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. The FFSP0865B 650V and 8A SiC Schottky Diodes come in a TO-220-2LD package.

Features

  • +175°C max junction temperature
  • 33mJ avalanche rated
  • High surge current capacity
  • Positive temperature coefficient
  • Ease of paralleling
  • No Reverse Recovery / No Forward Recovery
  • Lead-free
  • Halogen-free/BFR-free
  • RoHS compliant

Applications

  • General purpose
  • Switch-mode power supplies (SMPS)
  • Solar inverters
  • Uninterruptible power supplies (UPS)
  • Power switching circuits

Electrical Connection

Location Circuit - onsemi FFSP0865B 650V 8A SiC Schottky Diodes
Published: 2019-11-07 | Updated: 2024-02-02