onsemi FFSPx065BDN-F085 Automotive SiC Schottky Diodes
onsemi FFSPx065BDN-F085 Automotive Silicon Carbide (SiC) Schottky Diodes are AEC-Q101-qualified devices designed to leverage the advantages of Silicon Carbide (Si) over Silicon. The FFSPx065BDN-F085 SiC Schottky Diodes feature drastically higher forward surge capability, lower reverse leakage, and no reverse recovery current. These SiC Schottky Diodes also offer temperature-independent switching and excellent thermal performance. This results in improved system efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size/cost.onsemi FFSP SiC Schottky Diodes are offered in an industry standard TO-220-3L package. This allows designers to use them as a drop-in replacement for their Silicon counterparts, resulting in immediate gains in efficiency, as well as lower operating temperatures, with minimum system modification.
Features
- SiC provides superior switching performance and higher reliability
- High surge current capacity
- Positive temperature coefficient
- No reverse recovery
- No forward recovery
- +175°C maximum junction temperature
- Ease of paralleling
- Industry-standard TO-220-3L package
- AEC-Q101 qualified
- Pb-free, Halogen-free/BFR-free, and RoHS-compliant
Applications
- Automotive HEV-EV onboard chargers
- Automotive HEV-EV DC-DC converters
View Results ( 2 ) Page
| Part Number | Datasheet | If - Forward Current | Ifsm - Forward Surge Current | Pd - Power Dissipation |
|---|---|---|---|---|
| FFSH4065BDN-F085 | ![]() |
40 A | 84 A | 127 W |
| FFSH2065BDN-F085 | ![]() |
20 A | 42 A | 65 W |
Published: 2019-09-04
| Updated: 2024-02-28

