onsemi Silicon Photomultipliers (SiPMs)

onsemi Silicon Photomultipliers (SiPMs) feature high gain, fast timing, and excellent PDE with practical advantages associated with solid state technology (SST). These onsemi SiPMs offer a fast output terminal and are manufactured using a CMOS process. The SiPMs have a breakdown voltage uniformity of ±250mV across all sensors in a product line, a low-temperature coefficient of 21mV/°C, and <30V bias voltage. These SiPMs are ideal for medical imaging, hazard and threat, 3D ranging and imaging, and high energy physics.

Features

  • <30V bias voltage
  • 21.5mV/°C low temperature coefficient
  • ±250mV breakdown voltage uniformity across all sensors in a given product line
  • Unique fast output terminal
  • Manufactured using a CMOS process
  • Available in a reflow-solder compatible package

Applications

  • Medical imaging
  • Hazard and threat
  • 3D ranging and imaging
  • Biophotonics and sciences
  • High-energy physics

Characteristic of Each Silicon Series

Infographic - onsemi Silicon Photomultipliers (SiPMs)

Videos

Published: 2020-02-07 | Updated: 2024-06-10