Taiwan Semiconductor MMBT3904 NPN Bipolar Transistor

Taiwan Semiconductor MMBT3904 NPN Bipolar Transistor is designed to achieve low power loss and high surge current capability. This transistor delivers high efficiency and is ideal for automated placement. The MMBT3904 transistor is designed with 60V of collector-to-base voltage (VCBO), 40V of collector-to-emitter voltage (VCEO), and 6V of emitter-to-base voltage (VEBO). This transistor features a collector current of 200mA and a power dissipation (PD) of 300mW. The MMBT3904 NPN transistor offers a Moisture Sensitivity Level (MSL-1) as per the J-STD-020 standards and is halogen-free according to IEC 61249-2-21 standards. Ideally, this transistor is used in Switching Mode Power Supply (SMPS), adapters, on-board DC/DC converters, and lighting applications.

Features

  • Low power loss and high efficiency
  • Ideal for automated placement
  • High surge current capability
  • 60V of collector-to-base voltage (VCBO)
  • 40V of collector-to-emitter voltage (VCEO)
  • 6V of emitter-to-base voltage (VEBO)
  • 200mA collector current (IC)
  • 300mW power dissipation (PD)
  • -55°C to 150°C junction temperature range
  • Moisture sensitivity level: level 1, per J-STD-020
  • RoHS compliant
  • Halogen-free according to IEC 61249-2-21

Applications

  • Switching Mode Power Supply (SMPS)
  • Adapters
  • Lighting
  • On-board DC/DC converters

Package Outline Dimensions

Mechanical Drawing - Taiwan Semiconductor MMBT3904 NPN Bipolar Transistor
Published: 2023-01-03 | Updated: 2023-01-11