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Toshiba HN1x Bipolar Transistors

Toshiba HN1x Bipolar Transistors are AEC-Q101 qualified and optimized for low-frequency amplifier applications. The HN1x Bipolar Transistors feature high voltage, high collector current, and an excellent hFE linearity. The devices are offered in a small SOT-363 (US6) package.

Features

  • AEC-Q101 qualified 
  • Small package (Dual type)
  • High voltage
  • High collector current of 150mA (max)
  • High hFE range of 120 to 400
  • Excellent hFE linearity, hFE (IC = 0.1mA)/hFE (IC = 2mA) = 0.95 (typ.)

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Toshiba Bipolar Transistors

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FE Package Style

Mechanical Drawing - Toshiba HN1x Bipolar Transistors

FU Package Style

Mechanical Drawing - Toshiba HN1x Bipolar Transistors
Published: 2021-12-01 | Updated: 2022-03-11