SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
SCT012W90G3-4AG
STMicroelectronics
1:
$20.75
640 In Stock
New Product
Mouser Part No
511-SCT012W90G3-4AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 900 V, 12 mOhm typ., 110 A in an HiP247-4 package
640 In Stock
1
$20.75
10
$17.69
100
$15.30
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP247-3
N-Channel
1 Channel
900 V
110 A
15.8 mOhms
- 10 V, + 22 V
3.1 V
138 nC
- 55 C
+ 200 C
625 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
360°
SCT025W120G3AG
STMicroelectronics
1:
$18.05
502 In Stock
New Product
Mouser Part No
511-SCT025W120G3AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247 package
502 In Stock
1
$18.05
10
$14.45
100
$12.49
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP247-3
N-Channel
1 Channel
1.2 kV
56 A
37 mOhms
- 10 V, + 22 V
3 V
73 nC
- 55 C
+ 200 C
388 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
SCT015W120G3-4AG
STMicroelectronics
1:
$24.23
600 Expected 27/07/2026
Mouser Part No
511-SCT015W120G3-4AG
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mOhm typ., 129 A in an HiP247-4 package
600 Expected 27/07/2026
1
$24.23
10
$19.83
100
$17.51
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP-247-4
N-Channel
1 Channel
1.2 kV
129 A
15 mOhms
- 18 V, + 18 V
4.2 V
167 nC
- 55 C
+ 200 C
673 W
Enhancement
AEC-Q101
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
SCT040W120G3-4
STMicroelectronics
1:
$11.38
100 On Order
New Product
Mouser Part No
511-SCT040W120G3-4
New Product
STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 40 mOhm typ., 40 A in an HiP247-4 package
100 On Order
1
$11.38
10
$9.27
100
$7.72
500
$6.88
1,000
$5.84
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP247-4
N-Channel
1 Channel
1.2 kV
40 A
54 mOhms
- 10 V, + 22 V
3.1 V
56 nC
- 55 C
+ 200 C
312 W
Enhancement
AEC-Q101
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
SCT019W120G3-4AG
STMicroelectronics
600:
$12.84
Non-Stocked Lead-Time 17 Weeks
New Product
Mouser Part No
511-SCT019W120G3-4AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 19.2 mOhm typ., 90 A in a HiP247-4 package
Non-Stocked Lead-Time 17 Weeks
Buy
Min.: 600
Mult.: 600
Through Hole
HiP247-4
N-Channel
1 Channel
1.2 kV
90 A
26 mOhms
- 10 V, + 22 V
4.2 V
120 nC
- 55 C
+ 200 C
486 W
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
SCT025W120G3-4
STMicroelectronics
600:
$11.73
Non-Stocked Lead-Time 17 Weeks
New Product
Mouser Part No
511-SCT025W120G3-4
New Product
STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 56 A in an HiP247-4 package
Non-Stocked Lead-Time 17 Weeks
Buy
Min.: 600
Mult.: 600
Details
Through Hole
HiP247-4
N-Channel
1 Channel
1.2 kV
56 A
37 mOhms
-10 V, 22 V
4.2 V
73 nC
- 55 C
+ 200 C
388 W
Enhancement
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
SCT070W120G3-4
STMicroelectronics
1:
$10.93
Non-Stocked Lead-Time 17 Weeks
New Product
Mouser Part No
511-SCT070W120G3-4
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A in an HiP247-4 package
Non-Stocked Lead-Time 17 Weeks
1
$10.93
10
$6.53
100
$5.56
500
$5.18
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP247-4
N-Channel
1.2 kV
30 A
87 mOhms
- 10 V, + 22 V
3 V
41 nC
- 55 C
+ 200 C
236 W
Enhancement
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
SCT070W120G3AG
STMicroelectronics
600:
$7.34
Non-Stocked Lead-Time 17 Weeks
New Product
Mouser Part No
511-SCT070W120G3AG
New Product
STMicroelectronics
SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 63 mOhm typ., 30 A
Non-Stocked Lead-Time 17 Weeks
Buy
Min.: 600
Mult.: 600
Details
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
SCTWA40N120G2V
STMicroelectronics
1:
$18.04
Non-Stocked Lead-Time 32 Weeks
NRND
Mouser Part No
511-SCTWA40N120G2V
NRND
STMicroelectronics
SiC MOSFETs Silicon carbide Power MOSFET 1200 V, 62 mOhm typ., 36 A in an HiP247 package
Non-Stocked Lead-Time 32 Weeks
1
$18.04
10
$13.74
100
$11.55
Buy
Min.: 1
Mult.: 1
Details
Through Hole
HiP247-3
N-Channel
1 Channel
1.2 kV
36 A
100 mOhms
- 10 V, + 22 V
2.45 V
61 nC
- 55 C
+ 200 C
278 W
Enhancement