Nexperia PXNx N-Channel Logic Level Trench MOSFETs
Nexperia PXNx N-Channel Logic Level Trench MOSFETs are designed for high-efficiency power management in various applications. These Nexperia MOSFETs feature low on-state resistance [RDS(on)], ranging from 2.8mΩ to 14mΩ, and support 60V and 100V drain-source voltages (VDS). These MOSFETs are optimized for logic level compatibility and are suitable for secondary side synchronous rectification, DC-to-DC converters, motor drives, load switching, and LED lighting. These MOSFETs are housed in thermally efficient MLPAK33 and MLPAK56 packages, which offer a compact footprint and enhanced thermal performance. With features like low gate charge (Qg) and high avalanche ruggedness, the PXNx series ensures reliable operation in demanding environments.
Features
- 60V and 100V options
- Drain-source on-state resistance
- 5.7mΩ to 14mΩ range for 60V
- 2.8mΩ to 2.9mΩ range for 100V
- Logic level compatibility
- Trench MOSFET technology
- Thermally efficient packages in a small form factor
- 3.3mm x 3.3mm footprint, MLPAK33 (SOT8002-1) for 60V
- 5.15mm x 6.15mm footprint, MLPAK56 (SOT8038-1) for 100V
Applications
- Secondary side synchronous rectification
- DC-to-DC converters
- Home appliances
- Motor drives
- Load switching
- LED lighting
- E-bikes (100V only)
Specifications
- Maximum drain current ranges
- 39A to 83A for 60V
- 180A to 184A for 100V
- Maximum total power dissipation ranges
- 43W to 79W for 60V
- 181W for 100V
- Typical gate drain charge ranges
- 2.1nC to 5.7nC for 60V
- 19nC to 20nC for 100V
- Typical total gate charge ranges
- 5.9nC to 16.5nC for 60V
- 51nC to 74nC for 100V
- Maximum non-repetitive drain source avalanche energy ranges
- 22.5mJ to 90mJ for 60V
- 275.6mJ to 714mJ for 100V
- Typical source-drain diode recovered charge ranges
- 4.9nC to 11nC for 60V
- 31nC to 48nC for 100V
- -55°C to +150°C junction temperature range
Published: 2025-04-08
| Updated: 2025-04-13