Taiwan Semiconductor MMBT3904T NPN Bipolar Transistor
Taiwan Semiconductor MMBT3904T NPN Bipolar Transistor is an epitaxial planar type transistor with improved electrical conductivity. This transistor is designed with 60V of collector-to-base voltage (VCBO), 40V of collector-to-emitter voltage (VCEO), and 6V of emitter-to-base voltage (VEBO). The MMBT3904T NPN transistor features a collector current of 200mA and a power dissipation (PD) of 150mW. This transistor is halogen-free according to IEC 61249-2-21 standards and RoHS compliant. Some of the applications include consumer electronics, low-frequency amplifiers, and drivers.
Features
- Complementary PNP Type: MMBT3906T
- Epitaxial planar type
- 60V collector-to-base voltage (VCBO)
- 40V collector-to-emitter voltage (VCEO)
- 6V emitter-to-base voltage (VEBO)
- 200mA collector current (IC)
- 150mW power dissipation (PD)
- -55°C to 150°C junction temperature range
- RoHS compliant
- Halogen-free according to IEC 61249-2-21
Applications
- Consumer electronics
- Low-frequency amplifiers
- Drivers
Package Outline Dimensions
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Published: 2023-01-02
| Updated: 2023-01-11