Vishay Semiconductors VSMY2850x High-Speed IR Emitting Diodes
Vishay Semiconductors VSMY2850x High-Speed IR Emitting Diodes feature a peak wavelength of 850nm based on GaAlAs surface emitter chip technology. These diodes feature high optical power, high radiant intensities, and high speed. The VSMY2850x diodes are molded in clear and untinted plastic packages (with lens) for surface mounting. Vishay Semiconductors VSMY2850x High-Speed IR Emitting Diodes are ideal for IrDA-compatible data transmission, miniature light barriers, photo interrupters, optical switches, IR touch panels, and more.
Features
- GW, RGW package form
- High radiant intensity
- Angle of half intensity: ϕ = ±10°
- Terminal configurations: gullwing or reverse gullwing
- Package matches with detector VEMD2500X01 series
- Floor life: 4 weeks, MSL 2a, according to J-STD-020
- Halogen-free according to IEC 61249-2-21 definition
- 2.3mm x 2.3mm x 2.8mm dimensions
Applications
- IrDA-compatible data transmission
- Miniature light barriers
- Photo interrupters
- Optical switches
- Emitter source for proximity sensors
- IR touch panels
- IR illumination
Related Diodes
Vishay Semiconductors VSMY High Speed IR Emitting Diodes
Provide higher, better radiant intensity than standard; available in 4 package forms.
Published: 2019-10-30
| Updated: 2023-12-31