New Transistors
IXYS X4-Class Power MOSFETs offer low on-state resistance and conduction losses, with improved efficiency. These power MOSFETs come in a PLUS package, enabling higher nominal current rating and increased power density. The X4-Class power MOSFETs are pin compatible with the standard TO-247 package and are easy to upgrade from existing designs for higher power output. These power MOSFETs feature low gate charge and low thermal resistance. Typical applications include DC load switch, battery protection, battery OR-ing, battery energy storage systems, and DC/DC buck-boost converters.
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IXYS X4-Class Power MOSFETsOffer low on-state resistance and conduction losses, with improved efficiency.2/2/2026
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Qorvo QPD1014A GaN Input Matched Transistors15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.1/20/2026 -
Qorvo QPD1011A GaN Input Matched Transistors7W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMTs operating from 30MHz to 1.2GHz.1/19/2026 -
Qorvo QPD1004A GaN Input Matched Transistors25W, 50Ω input matched discrete GaN on SiC HEMT operates from 30MHz to 1400MHz on a 50V supply rail.1/19/2026 -
onsemi NVBYST0D6N08X 80V N-Channel Power MOSFETThis device offers a low QRR and soft recovery body diode in a TCPAK1012 (TopCool) package.12/26/2025 -
Infineon Technologies OptiMOS™ 6 80V Power MOSFETsSets industry benchmark performance with a wide portfolio offering.12/23/2025 -
onsemi NVMFD5877NL Dual N-Channel MOSFETDesigned for compact and efficient designs including high thermal performance.12/19/2025 -
Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETsEngineered to meet the stringent demands of electric vehicle (EV) applications.12/19/2025 -
onsemi NxT2023N065M3S EliteSiC MOSFETsFeature low effective output capacitance and ultra-low gate charge.12/4/2025 -
STMicroelectronics SGT080R70ILB E-Mode PowerGaN TransistorE-Mode PowerGaN transistor designed for high-efficiency power conversion applications.12/4/2025 -
Infineon Technologies 750V TRENCHSTOP™ IGBT7 H7 Discrete TransistorsDTO247 package, replaces multiple lower-current transistors in TO247 packages connected in parallel.12/1/2025 -
onsemi FDC642P-F085 Small Signal MOSFETOffers a high-performance trench technology for extremely low RDS(on) and fast switching speed.11/25/2025 -
onsemi NTTFS007P02P8 P-Channel Low/Medium Voltage MOSFETBuilt using PowerTrench technology for extremely low RDS(on) switching performance and ruggedness.11/25/2025 -
iDEAL Semiconductor iS20M028S1C SuperQ™ 200V N-Ch Power MOSFETsDesigned for SMPS and high-efficiency motor drives in a robust PDFN package measuring 5mm x 6mm.11/24/2025 -
onsemi NVD5867NL Single N-Channel Power MOSFETFeatures 60V drain-to-source voltage, 39mΩ drain-to-source on resistance, and AEC-Q101 qualified.11/20/2025 -
Central Semiconductor 1,700 V N-Channel Silicon Carbide (SiC) MOSFETsThese MOSFETS are designed for high-speed switching and fast reverse recovery applications.11/20/2025 -
onsemi NVD6824NL Single N-Channel MOSFETsOffer low RDS(on) to minimize conduction losses and high current capability.11/20/2025 -
onsemi AFGB30T65RQDN IGBTOffers a high figure of merit with low conduction and switching losses.11/19/2025 -
onsemi NVMFS5830NL Single N-Channel Power MOSFETHigh-efficiency single n-channel power MOSFET designed for demanding power management applications.11/19/2025 -
onsemi NVMFS5832NL Single N-Channel Power MOSFETHigh-performance MOSFET designed for low-voltage applications requiring efficient power switching.11/19/2025 -
STMicroelectronics SGT070R70HTO E-Mode PowerGaN TransistorBuilt on GaN technology and designed for demanding power conversion applications.11/7/2025 -
Comchip Technology AMMBT2907AM PNP Automotive Small Signal TransistorThe device has a -60V collector-base voltage rating & a -600mA collector current-continuous rating.10/31/2025 -
Comchip Technology AMMBT2222AM NPN Automotive Small Signal TransistorThe device has a 75V collector-base voltage rating and a 600mA collector current-continuous rating.10/31/2025 -
Diodes Incorporated 2N7002 N-Channel E-Mode Field Effect TransistorsOffers fast switching performance with low gate charge and 60V maximum drain-source voltage.10/31/2025 -
Diodes Incorporated DMTH64M2LPDW Dual N-Channel E-Mode MOSFETIntegrates two MOSFETs in a single PowerDI® 5mm x 6mm package with excellent thermal performance.10/31/2025